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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Jun 24 2003 Nov 21 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor FEATURES * SOT89 (SC-62) package * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * Higher efficiency leading to less heat generation * Reduced printed-circuit board requirements. APPLICATIONS * Power management - DC/DC converters - Supply line switching - Battery charger - LCD backlighting. * Peripheral drivers - Driver in low supply voltage applications (e.g. lamps and LEDs). - Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION PNP low VCEsat transistor in a SOT89 plastic package. NPN complement: PBSS4350X. MARKING TYPE NUMBER PBSS5350X S46 MARKING CODE 1 Bottom view 2 3 handbook, halfpage PBSS5350X QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 emitter collector base DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. -50 -3 -5 135 UNIT V A A m 2 3 1 MAM297 Fig.1 Simplified outline (SOT89) and symbol. 2003 Nov 21 2 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5350X - DESCRIPTION PBSS5350X VERSION SOT89 plastic surface mounted package; collector pad for good heat transfer; 6 leads LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation Tamb 25 C note 1 note 2 note 3 note 4 Tj Tamb Tstg Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 6 cm2. 4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tinplated. junction temperature operating ambient temperature storage temperature - - - - - -65 -65 550 1 1.4 1.6 150 +150 +150 mW W W W C C C CONDITIONS open emitter open base open collector note 4 limited by Tj max - - - - - - MIN. MAX. -50 -50 -5 -3 -5 -0.5 V V V A A A UNIT 2003 Nov 21 3 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor PBSS5350X handbook, halfpage 2 MLE186 Ptot (W) 1.6 (1) (2) 1.2 (3) 0.8 (4) 0.4 0 0 40 80 120 160 Tamb (C) (1) Ceramic PCB; 7 cm2 mounting pad for collector. (2) FR4 PCB; 6 cm2 copper mounting pad for collector. (3) FR4 PCB; 1 cm2 copper mounting pad for collector. (4) Standard footprint. Fig.2 Power derating curves. 2003 Nov 21 4 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air note 1 note 2 note 3 note 4 Rth-js Notes thermal resistance from junction to soldering point 225 125 90 80 16 VALUE PBSS5350X UNIT K/W K/W K/W K/W K/W 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 6 cm2. 4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tinplated. 103 handbook, full pagewidth Zth (K/W) 102 (1) (2) (3) (4) (5) MLE373 10 (6) (7) (8) (9) P = tp T 1 (10) tp T 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 t tp (s) 103 Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) = 1. (2) = 0.75. (3) = 0.5. (4) = 0.33. (5) = 0.2. (6) = 0.1. (7) = 0.05. (8) = 0.02. (9) = 0.01. (10) = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2003 Nov 21 5 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO ICES IEBO hFE PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain CONDITIONS VCB = -50 V; IE = 0 VCB = -50 V; IE = 0; Tj = 150 C VCE = -50 V; VBE = 0 VEB = -5 V; IC = 0 VCE = -2 V IC = -0.1 A IC = -0.5 A IC = -1 A; note 1 IC = -2 A; note 1 IC = -3 A; note 1 VCEsat collector-emitter saturation voltage IC = -0.5 A; IB = -50 mA IC = -1 A; IB = -50 mA IC = -2 A; IB = -100 mA IC = -2 A; IB = -200 mA; note 1 IC = -3 A; IB = -300 mA; note 1 RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp 300 s; 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = -2 A; IB = -200 mA; note 1 IC = -2 A; IB = -100 mA IC = -3 A; IB = -300 mA; note 1 VCE = -2 V; IC = -1 A IC = -100 mA; VCE = -5 V; f = 100 MHz VCB = -10 V; IE = Ie = 0; f = 1 MHz 200 200 200 130 80 - - - - - - - - -1.1 100 - - - - - - - - - - - 90 - - - - - MIN. - - - - PBSS5350X TYP. - - - - MAX. -100 -50 -100 -100 - - 450 - - -90 -180 -320 -270 -390 135 -1.1 -1.2 - - 35 UNIT nA A nA nA mV mV mV mV mV m V V V MHz pF 2003 Nov 21 6 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor PBSS5350X handbook, halfpage (1) 600 MLE171 handbook, halfpage -1.2 MLE170 hFE VBE (V) (1) (2) 400 -0.8 (2) (3) (3) 200 -0.4 0 -10-1 -1 -10 -102 -103 -104 IC (mA) 0 -10-1 -1 -10 -102 -103 -104 IC (mA) VCE = -2 V. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -55 C. VCE = -2 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 100 C. Fig.4 DC current gain as a function of collector current; typical values. Fig.5 Base-emitter voltage as a function of collector current; typical values. handbook, halfpage -1 MLE173 handbook, halfpage -1 MLE174 VCEsat (V) -10-1 VCEsat (V) -10-1 (1) (2) (2) (1) -10-2 (3) -10-2 (3) -10-3 -10-1 -1 -10 -102 -103 -104 IC (mA) -10-3 -10-1 -1 -10 -102 -103 -104 IC (mA) IC/IB = 20. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Tamb = 25 C. (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10. Fig.6 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. 2003 Nov 21 7 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor PBSS5350X handbook, halfpage -1.2 MLE175 103 handbook, halfpage RCEsat () 102 MLE172 VBEsat (V) -1 (1) -0.8 (2) (3) 10 -0.6 1 (1) (2) -0.4 10-1 (3) -0.2 -10-1 -1 -10 -102 -103 -104 IC (mA) 10-2 -10-1 -1 -10 -102 -103 -104 IC (mA) IC/IB = 20. IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 100 C. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.9 Fig.8 Base-emitter saturation voltage as a function of collector current; typical values. Collector-emitter equivalent on-resistance as a function of collector current; typical values. handbook, halfpage -1 MLE168 IC (A) (1) (2) (3) (4) (5) handbook, halfpage -5 MLE169 IC (A) (7) (6) (5) (4) (3) (2) (1) -0.8 -4 -0.6 (6) (7) -3 (8) (9) -0.4 (8) (9) -2 (10) -0.2 (10) -1 0 0 -0.4 -0.8 -1.2 -1.6 -2 VCE (V) 0 0 -0.4 -0.8 -1.2 -1.6 -2 VCE (V) Tamb = 25 C. (1) (2) (3) (4) IB = -3500 A. IB = -3150 A. IB = -2800 A. IB = -2450 A. (5) (6) (7) (8) IB = -2100 A. IB = -1750 A. IB = -1400 A. IB = -1050 A. (9) IB = -700 A. (10) IB = -350 A. Tamb = 25 C. (1) (2) (3) (4) IB = -140 mA. IB = -126 mA. IB = -112 mA. IB = -98 mA. (5) (6) (7) (8) IB = -84 mA. IB = -70 mA. IB = -56 mA. IB = -42 mA. (9) IB = -28 mA. (10) IB = -14 mA. Fig.10 Collector current as a function of collector-emitter voltage; typical values. Fig.11 Collector current as a function of collector-emitter voltage; typical values. 2003 Nov 21 8 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads PBSS5350X SOT89 D B A b3 E HE L 1 2 b2 3 c wM b1 e1 e 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 b1 0.48 0.35 b2 0.53 0.40 b3 1.8 1.4 c 0.44 0.37 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 L min. 0.8 w 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC TO-243 EIAJ SC-62 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2003 Nov 21 9 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION PBSS5350X This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Nov 21 10 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp11 Date of release: 2003 Nov 21 Document order number: 9397 750 12168 |
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